6mbi180vb-120-50

6MBI180VB IGBT MODULE

Поставка электронных компонентов в Самару

18.900,00 руб.

x 18.900,00 = 18.900,00
Артикул: 1169425 Категория:
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Склад №110-12 дней18.900,00руб.17.577,00руб.16.632,00руб.16.065,00руб.15.498,00руб.
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Склад №210-12 дней23.058,00руб.20.034,00руб.18.711,00руб.17.955,00руб.15.876,00руб.
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Склад №37 дней24.948,00руб.23.625,00руб.22.491,00руб.21.168,00руб.18.711,00руб.
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Склад №410 дней22.491,00руб.21.357,00руб.20.223,00руб.19.089,00руб.16.821,00руб.
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Склад №510-12 дней20.979,00руб.19.845,00руб.18.711,00руб.17.766,00руб.15.687,00руб.
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Склад №66 дней26.082,00руб.24.759,00руб.23.436,00руб.22.113,00руб.19.656,00руб.

Характеристики

6MBI180VB-120-50 IGBT Modules IGBT MODULE (V series) 1200V / 180A / 6 in one package

Features Compact Package P.C.Board Mount Low VCE (sat) Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

Items Symbols Conditions Maximum ratings Units Inverter Collector-Emitter voltage VCES 1200 V Gate-Emitter voltage VGES ±20 V Collector current Ic Continuous Tc=80°C 150 A Icp 1ms Tc=80°C 400 -Ic 150 -Ic pulse 1ms 400 Collector power dissipation Pc 1 device 835 W Junction temperature Tj 175 °C Operating junciton temperature (under switching conditions) Tjop 150 Case temperature Tc 125 Storage temperature Tstg -40 to +125 Isolation voltage between terminal and copper base (*1) between thermistor and others (*2) Viso AC : 1min. 2500 VAC Screw torque Mounting (*3) — M5 3.5 N m Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5)

Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V — — 1.0 mA Gate-Emitter leakage current IGES VGE = 0V, VGE = ±20V — — 200 nA Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 200mA 6.0 6.5 7.0 V Collector-Emitter saturation voltage VCE (sat) (terminal) VGE = 15V IC = 200A Tj=25°C — 2.85 3.30 V Tj=125°C — 3.20 — Tj=150°C — 3.25 — VCE (sat) (chip) VGE = 15V IC = 200A Tj=25°C — 1.85 2.30 Tj=125°C — 2.20 — Tj=150°C — 2.25 — Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz — 16.5 — nF Turn-on time ton VCC = 600V IC = 200A VGE = +15 / -15V RG = 1.2Ω — 0.39 1.20 µs tr — 0.09 0.60 tr (i) — 0.03 — Turn-off time toff — 0.53 1.00 tf — 0.06 0.30 Forward on voltage VF (terminal) IF = 200A Tj=25°C — 2.70 3.15 V Tj=125°C — 2.85 — Tj=150°C — 2.80 — VF (chip) IF = 200A Tj=25°C — 1.70 2.15 Tj=125°C — 1.85 — Tj=150°C — 1.80 — Reverse recovery time trr IF = ±20 — — 0.1 µs Thermistor Resistance R T = 25°C — 5000 — Ω T = 100°C 465 495 520 B value B T = 25 / 50°C 3305 3375 3450 K Thermal resistance characteristics Items Symbols Conditions Characteristics Units min. typ. max. Thermal resistance (1device) Rth(j-c) Inverter IGBT — — 0.18 Inverter FWD — — 0.29 °C/W Contact thermal resistance (1device) (*4) Rth(c-f) with Thermal Compound — 0.05 — Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.