BSC350N20NSFDATMA1, МОП-транзистор, N Канал, 35 А, 200 В

Характеристики

BSC350N20NSFDATMA1, МОП-транзистор, N Канал, 35 А, 200 В The BSC350N20NSFDATMA1 from Infineon is a 200V OptiMOST™3 N-channel power-MOSFET in 8 pin TDSON package. This new OptiMOS™ Fast Diode (FD) Infineon’s latest generation power MOSFETs are optimized for body diode hard commutation, hard switching behaviour, industry’s lowest Rds(on), Qg and Qrr, highest system reliability, system cost reduction, highest efficiency and power density and easy to design products. It is a perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control for 48V to 110V systems and DC to AC inverter.

• Excellent gate charge x RDS(on) product (figure of merit)
• Very low on-resistance RDS(on)
• Ideal for high-frequency switching and synchronous rectification
• Drain source voltage VDS is 200V
• Maximum RDS(on) is 35mohm, continuous drain current ID is 35A
• Operating temperature range from -55 C to 175 C
• Power dissipation is 150W
• Maximum gate source voltage VGS is 20V

Полупроводники — ДискретныеТранзисторыМОП-транзисторы