FDN357N, МОП-транзистор, N Канал, 2.5 А, 30 В, 0.053 Ом

Характеристики

FDN357N, МОП-транзистор, N Канал, 2.5 А, 30 В, 0.053 Ом The FDN357N is a SuperSOT™-3 N-channel logic level enhancement-mode Power FET produced using Fairchild’s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount-package. It comes with industry standard outline surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.

• High density cell design for extremely low RDS (ON)
• Exceptional ON-resistance and maximum DC current capability

Полупроводники — ДискретныеТранзисторыМОП-транзисторы