FDN358P, МОП-транзистор, P Канал, 1.6 А, -30 В, 200 мОм

Характеристики

FDN358P, МОП-транзистор, P Канал, 1.6 А, -30 В, 200 мОм The FDN358P is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power version of industry standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. It is well suited for load switching, battery charging circuits and DC-to-DC conversion application.

• High performance Trench technology for extremely low RDS (ON)
• 4nC Typical low gate charge

Полупроводники — ДискретныеТранзисторыМОП-транзисторы