FDN361BN, МОП-транзистор, N Канал, 1.4 А, 30 В, 0.092 Ом

Характеристики

FDN361BN, МОП-транзистор, N Канал, 1.4 А, 30 В, 0.092 Ом The FDN361BN is a N-channel Logic Level MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package. It comes with industry standard outline SOT-23 surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.

• Low gate charge
• High performance Trench technology for extremely low RDS (ON)

Полупроводники — ДискретныеТранзисторыМОП-транзисторы