Характеристики
IXFX20N120P, МОП-транзистор, N Канал, 20 А, 1.2 кВ, 0.57 Ом The IXFX20N120P is a HiPerFET™ N-channel enhancement-mode Polar™ Power MOSFET features avalanche rated and fast intrinsic diode.
• International standard package
• Unclamped inductive switching (UIS) rated
• Low package inductance
• Easy to mount
• Space savings
• High power density
Полупроводники — ДискретныеТранзисторыМОП-транзисторы