Характеристики
IXKR25N80C, МОП-транзистор, N Канал, 25 А, 800 В, 150 мОм The IXKR25N80C is a CoolMOS™ N-channel enhancement-mode Power MOSFET features avalanche rated for unclamped inductive switching (UIS) and low ON-resistance.
• ISOPLUS247™ package with DCB base
• Electrical isolation towards the heat sink
• Low coupling capacitance to the heat sink for reduced EMI
• High power dissipation
• High temperature cycling capability of chip on DCB
• JEDEC TO-247AD compatible
• Easy clip assembly
• Fast CoolMOS™ power MOSFET 3rd generation
• High blocking capability
• Low thermal resistance due to reduced chip thickness
• Enhanced total power density
• Low RDS (ON)
• High VDSS
Полупроводники — ДискретныеТранзисторыМОП-транзисторы