Характеристики
IXTP3N60P, МОП-транзистор, N Канал, 3 А, 600 В, 2.9 Ом The IXTP3N60P is a PolarHV™ N-channel enhancement-mode Power MOSFET features avalanche rated and low package inductance.
• International standard package
• Unclamped inductive switching (UIS) rated
• Easy to mount
• Space savings
• High power density
Полупроводники — ДискретныеТранзисторыМОП-транзисторы