PMMT591A, Биполярный транзистор, PNP, 40 В, 250 мВт, 1 А, 300 hFE

Характеристики

PMMT591A, Биполярный транзистор, PNP, 40 В, 250 мВт, 1 А, 300 hFEThe PMMT591A is a PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. It is suitable for use with the battery powered units where high current and low power consumption are important.

• High voltage
• High current
• Low collector-emitter saturation voltage VCEsat ensures reduced power consumption
• NPN complement is PMMT491A
• 9B Marking code

Полупроводники — ДискретныеТранзисторыБиполярные Транзисторы